Drawing on 40 years of
research and development experience in graphite technology
to design the best family of precursor materials for
its unique conversion process that produces the high-purity
SUPERSiC®, silicon carbide, Material System. SUPERSiC
components outperform existing materials in overall
throughput by increasing yields, reducing particles,
improving plasma stability and exhibiting long part
life for reduced cost of ownership.
This nontraditional
conversion process allows complex machining to be done
in the graphite state with minimal machining after
the conversion to silicon carbide. Complex designs
with thin walls and tight tolerances are as easy to
produce as simple thin parts such as dummy wafers.
These fully converted parts can then be subjected to
a number of cleans, infiltrations and coatings in order
to produce optimized silicon carbide components for
specific applications.
Unique to this conversion process is the
ability to press fit multiple pieces into an assembly
that can then be converted into a monolithic SiC component
that can have internal pockets and channels. This ability
creates maximum design flexibility.
This adhesiveless
bonding process cannot be accomplished by any other
silicon carbide manufacturing method. There are also
several mechanical attachment methods for mounting
finished silicon carbide components to other material
structures. |